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1.2V Drive Nch MOSFET
RUM002N05
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
VMT3
Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive).
Abbreviated symbol : RH
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RUM002N05 Type Taping T2L 8000
Inner circuit
(3)
1
2
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS Continuous ID Drain current Pulsed IDP *1 Continuous IS Source current (Body Diode) Pulsed ISP *1 Power dissipation PD *2 Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.
(1)
(2) 1 BODY DIODE 2 ESD PROTECTION DIODE
Limits 50 8 200 800 125 800 150 150 55 to +150
Unit V V mA mA mA mA mW C C
(1) GATE (2) SOURCE (3) DRAIN
Tch Tstg
Thermal resistance Parameter Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol Rth (ch-a)*
Limits 833
Unit C / W
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c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.02 - Rev.A
RUM002N05
Electrical characteristics (Ta = 25C) Parameter Symbol
Data Sheet
Min. 50 0.3 -
Typ. 1.6 1.7 1.9 2.0 2.4 25 6 3 4 6 15 55
Max. 10 1 1.0 2.2 2.4 2.7 4.0 7.2 -
Unit A V A V
Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V
Gate-source leakage Zero gate voltage drain current Gate threshold voltage
IGSS IDSS VGS (th)
Drain-source breakdown voltage V(BR)DSS
Static drain-source on-state resistance
* RDS (on)
-
ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
*Pulsed
l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf *
0.4 -
S pF pF pF ns ns ns ns
ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=4.5V RL=300 RG=10
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Forward voltage VSD *
*Pulsed
Max. 1.2
Unit V
Conditions Is=200mA, VGS=0V
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c 2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.02 - Rev.A
RUM002N05
Electrical characteristic curves
0.4
DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A]
VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V
Data Sheet
0.4
DRAIN CURRENT : ID[A]
VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V
1 Ta=25C Pulsed
VDS= 10V Pulsed
0.3
Ta=25C Pulsed VGS= 1.2V
0.3
0.1
0.2
VGS= 1.0V
0.2
VGS=1.2V VGS=1.0V
Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
0.01
0.1
VGS= 0.8V
0.1 VGS=0.8V 0
0 0 0.2 0.4 0.6 0.8 1
0.001 0 2 4 6 8 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( I )
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( II )
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
Ta= 25C Pulsed
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
100
100 VGS= 4.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C
100 VGS= 2.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C
10
VGS=1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
1
1
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( I )
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( II )
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( III )
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
100
VGS= 1.8V Pulsed
100
100
10
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= 1.5V Pulsed
10
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= 1.2V Pulsed
10
1
1
1
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( IV )
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( V )
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( VI )
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c 2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.02 - Rev.A
RUM002N05
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
Data Sheet
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(ON)[
1
1
10 9 8 7 6 5 4 3 2 1 0 0 5 10 ID= 20mA ID=200mA Ta=25C Pulsed
Ta= -25C Ta=25C Ta=75C Ta=125C
SOURCE CURRENT : Is [A]
VDS= 10V Pulsed
VGS=0V Pulsed
0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.01
0.1 0.001
0.01
0.1
1
0
0.5
1
1.5
DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000
1000
SWITCHING TIME : t [ns]
CAPACITANCE : C [pF]
tf 100 td(off)
Ta=25C VDD=30V VGS=4.5V RG=10 Pulsed
100
Ta=25C f=1MHz VGS=0V
Ciss
10 Crss
10
tr
1
Coss
td(on) 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics 1 0.1 0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
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c 2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.02 - Rev.A
RUM002N05
Measurement circuits
Pulse width
VGS ID RL D.U.T. RG VDD VDS
Data Sheet
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.02 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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